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NDT451AN
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NDT451AN Datasheet PDF (1 Pages)
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NDT451AN Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
30.0 V
Current Rating
7.10 A
Case/Package
TO-261-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.03 Ω
Polarity
N-Channel
Power Dissipation
3 W
Threshold Voltage
1.6 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
7.20 A
Rise Time
13 ns
Input Capacitance (Ciss)
720pF @15V(Vds)
Input Power (Max)
1.1 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
3 W

NDT451AN Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
6.7 mm
Size-Width
3.7 mm
Size-Height
1.7 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

NDT451AN Documents

Fairchild
1 Pages / 0.11 MByte
Fairchild
17 Pages / 1.1 MByte
Fairchild
1 Pages / 0.06 MByte
Fairchild
10 Pages / 0.22 MByte
Fairchild
1 Pages / 0.14 MByte

NDT451 Documents

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N-Channel Enhancement Mode Field Effect Transistor
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Trans MOSFET N-CH 30V 7.2A 4Pin(3+Tab) SOT-223 T/R
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Trans MOSFET N-CH 30V 7.2A 4Pin(3+Tab) SOT-223 T/R
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Trans MOSFET N-CH 30V 5.5A 4Pin(3+Tab) SOT-223 T/R
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Trans MOSFET N-CH 30V 7.2A 3Pin(2+Tab) SOT-223 T/R
ON Semiconductor
MOSFET N-CH 30V 7.2A SOT-223
TI
7.2A, 30V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
Freescale
MOSFET N-CH 30V 7.2A SOT-223-4
Fairchild
N-Channel Enhancement Mode Field Effect Transistor
National Semiconductor
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