NE3210S01-T1B Datasheet PDF - NEC

●DESCRIPTION

●The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

●FEATURES

●• Super Low Noise Figure & High Associated Gain

●   NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz

●• Gate Length: Lg ≤ 0.20 µm

●• Gate Width : Wg = 160 µm