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Part Datasheet Search > Operational Amplifiers(General Purpose) > ON Semiconductor > NE5517DR2G Datasheet PDF
NE5517DR2G
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NE5517DR2G Datasheet PDF (15 Pages)
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NE5517DR2G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
16 Pin
Case/Package
SOIC-16
Halogen Free Status
Halogen Free
Supply Current
2.6 mA
Number of Circuits
2 Circuit
Number of Channels
2 Channel
Number of Positions
16 Position
Power Dissipation
1125 mW
Common Mode Rejection Ratio
80 dB
Gain Bandwidth Product
2 MHz
Input Offset Voltage
400 µV
Input Bias Current
400 nA
Output Current (Max)
650 µA
Output Current (Min)
350 µA
Operating Temperature (Max)
70 ℃
Operating Temperature (Min)
0 ℃
Gain Bandwidth
2 MHz
Power Dissipation (Max)
1125 mW
Minimum CMRR Range
80 dB
Supply Voltage
44 VDC
Supply Voltage (Max)
30V ~ 50V
Supply Voltage (Min)
4 V

NE5517DR2G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
0℃ ~ 70℃

NE5517DR2G Documents

ON Semiconductor
15 Pages / 0.17 MByte
ON Semiconductor
16 Pages / 0.28 MByte
ON Semiconductor
2 Pages / 0.03 MByte

NE5517DR2 Documents

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IC OPAMP TRANSCOND 2MHz 16SOIC
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ON Semiconductor
NE5517DR2G, Dual Transconductance Op Amp, 2MHz Push-Pull, 30V, 16Pin SOIC
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