NGB8202NT4G Datasheet PDF - ON Semiconductor

●The NGB8202NT4G IGBT transistor from ON Semiconductor is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 440 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.