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Part Datasheet Search > IGBTs > ON Semiconductor > NGTB25N120FL2WG Datasheet PDF
NGTB25N120FL2WG
$ 4.364
NGTB25N120FL2WG Datasheet PDF (10 Pages)
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NGTB25N120FL2WG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
385000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
154 ns
Input Power (Max)
385 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
385000 mW

NGTB25N120FL2WG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

NGTB25N120FL2WG Documents

ON Semiconductor
10 Pages / 0.14 MByte
ON Semiconductor
11 Pages / 0.2 MByte
ON Semiconductor
10 Pages / 0.14 MByte
ON Semiconductor
12 Pages / 1.83 MByte

NGTB25N120FL2 Documents

ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 385000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 385000mW 3Pin(3+Tab) TO-247 Tube
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