NGTB25N120LWG Datasheet PDF - ON Semiconductor

●The NGTB25N120LWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications. Offering both low ON-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.

● Low saturation voltage using Trench with field-stop technology

● Low switching loss - Reduces system power dissipation

● Low gate charge

● Low conduction loss

● 5µs Short-circuit capability