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Part Datasheet Search > IGBTs > ON Semiconductor > NGTB35N65FL2WG Datasheet PDF
NGTB35N65FL2WG
$ 3.636
NGTB35N65FL2WG Datasheet PDF (10 Pages)
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NGTB35N65FL2WG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
300 W
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
68 ns
Input Power (Max)
300 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 W

NGTB35N65FL2WG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.08 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NGTB35N65FL2WG Documents

ON Semiconductor
10 Pages / 0.2 MByte
ON Semiconductor
14 Pages / 1.89 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
3 Pages / 0.72 MByte

NGTB35N65FL2 Documents

ON Semiconductor
Trans IGBT Chip N-CH 650V 70A 300000mW 3Pin(3+Tab) TO-247 Tube
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