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Part Datasheet Search > IGBTs > ON Semiconductor > NGTB40N120S3WG Datasheet PDF
NGTB40N120S3WG
$ 4.148

NGTB40N120S3WG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
454 W
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
163 ns
Input Power (Max)
454 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
454000 mW

NGTB40N120S3WG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 175℃ (TJ)

NGTB40N120S3WG Documents

ON Semiconductor
12 Pages / 0.21 MByte
ON Semiconductor
11 Pages / 0.15 MByte
ON Semiconductor
4 Pages / 0.75 MByte

NGTB40N120S3 Documents

ON Semiconductor
Trans IGBT Chip N-CH 1200V 160A 454000mW 3Pin(3+Tab) TO-247 Tube
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