NGTG15N60S1EG Datasheet PDF - ON Semiconductor

●The NGTG15N60S1EG is a 600V Insulated Gate Bipolar Transistor (IGBT) well suited for motor drive control and other hard switching applications. The IGBT features a robust and cost effective Non-Punch Through (NPT) Trench construction and provides superior performance in demanding switching applications.

● Low on state voltage and minimal switching loss

● Low saturation voltage resulting in low conduction loss

● Low switching loss in higher frequency applications

● 5µs Short-circuit capability