NRVBS360T3G Datasheet PDF - ON Semiconductor

●SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS

●This device  employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

●contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

●Features

●•Small Compact Surface Mountable Package with J−Bend Leads

●•Rectangular Package for Automated Handling

●•Highly Stable Oxide Passivated Junction

●•Excellent Ability to Withstand Reverse Avalanche Energy Transients

●•Guard−Ring for Stress Protection

●•NRVBS Prefix for Automotive and Other Applications Requiring

●Unique Site and Control Change Requirements; AEC−Q101

●Qualified and PPAP Capable

●•These are Pb−Free Devices