NSR05T30XV2T5G Datasheet PDF - ON Semiconductor

●These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro-packaging ideal for space constraint applications.

●Features |   | Benefits

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● Low Forward Voltage Drop - 580 mV (Typ.) @ IF = 500 mA

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● High Efficiency

● Low Reverse Current - 2.0 uA (Typ.) @ VR = 40 V

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● High Efficiency

● 500 mA of Continuous Forward Current

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● High Current Capability

● High ESD Rating: HBM - Class 3B; CDM - Class IV

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● ESD Robust

● High Switching Speed

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● Less Switching Losses

● These Devices are Pb-Free, Halogen Free/BFR Free and RoHS Compliant

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● Environmentally Friendly