NSS20201LT1G Datasheet PDF - ON Semiconductor

●Look no further than ON Semiconductor"s NPN NSS20201LT1G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.