NSV1C201MZ4T1G Datasheet PDF - ON Semiconductor

●If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s NPN NSV1C201MZ4T1G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.