NSV60601MZ4T1G Datasheet PDF - ON Semiconductor

●Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSV60601MZ4T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.