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Part Datasheet Search > MOSFETs > ON Semiconductor > NTB25P06T4G Datasheet PDF
NTB25P06T4G
$ 1.222
NTB25P06T4G Datasheet PDF (6 Pages)
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NTB25P06T4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-25.0 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.07 Ω
Polarity
P-Channel
Power Dissipation
120 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
27.5 A
Rise Time
72 ns
Input Capacitance (Ciss)
1680pF @25V(Vds)
Input Power (Max)
120 W
Fall Time
190 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
120 W

NTB25P06T4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.29 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTB25P06T4G Documents

ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
2 Pages / 0.02 MByte

NTB25P06T4 Documents

ON Semiconductor
D2PAK P-CH 60V 25A
ON Semiconductor
ON SEMICONDUCTOR NTB25P06T4G MOSFET Transistor, P Channel, -27.5A, -60V, 70mohm, -10V, -2.8V
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