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Part Datasheet Search > MOSFETs > ON Semiconductor > NTB5605PT4G Datasheet PDF
NTB5605PT4G
$ 0.054
NTB5605PT4G Datasheet PDF (7 Pages)
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NTB5605PT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-18.5 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.14 Ω
Polarity
P-Channel
Power Dissipation
88 W
Threshold Voltage
1.5 V
Input Capacitance
730 pF
Gate Charge
22.0 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
18.5 A
Rise Time
122 ns
Input Capacitance (Ciss)
1190pF @25V(Vds)
Input Power (Max)
88 W
Fall Time
75 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
88W (Tc)

NTB5605PT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.29 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTB5605PT4G Documents

ON Semiconductor
7 Pages / 0.13 MByte
ON Semiconductor
8 Pages / 0.19 MByte
ON Semiconductor
2 Pages / 0.02 MByte

NTB5605PT4 Documents

ON Semiconductor
D2PAK P-CH 60V 18.5A
ON Semiconductor
D2PAK P-CH 60V 18.5A
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