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Part Datasheet Search > MOSFETs > ON Semiconductor > NTD110N02RT4G Datasheet PDF
NTD110N02RT4G
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NTD110N02RT4G Datasheet PDF (6 Pages)
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NTD110N02RT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
24.0 V
Current Rating
110 A
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0041 Ω
Polarity
N-Channel
Power Dissipation
110 W
Threshold Voltage
1.5 V
Input Capacitance
3.44 nF
Gate Charge
28.0 nC
Drain to Source Voltage (Vds)
24 V
Breakdown Voltage (Drain to Source)
24 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
110 A
Rise Time
39 ns
Input Capacitance (Ciss)
3440pF @20V(Vds)
Input Power (Max)
1.5 W
Fall Time
21 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1.5W (Ta), 110W (Tc)

NTD110N02RT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTD110N02RT4G Documents

ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
8 Pages / 0.06 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
5 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.15 MByte

NTD110N02RT4 Documents

ON Semiconductor
DPAK N-CH 24V 32A
ON Semiconductor
Power MOSFET 24V 110A 4.6mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
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