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Part Datasheet Search > MOSFETs > ON Semiconductor > NTD12N10T4G Datasheet PDF
NTD12N10T4G
$ 0.169
NTD12N10T4G Datasheet PDF (8 Pages)
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NTD12N10T4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
12.0 A
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
165 mΩ
Polarity
N-Channel
Power Dissipation
1.76 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
30 ns
Input Capacitance (Ciss)
550pF @25V(Vds)
Input Power (Max)
1.28 W
Fall Time
32 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.28W (Ta), 56.6W (Tc)

NTD12N10T4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTD12N10T4G Documents

ON Semiconductor
8 Pages / 0.15 MByte
ON Semiconductor
9 Pages / 0.28 MByte

NTD12N10T4 Documents

ON Semiconductor
Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) DPAK T/R
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