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NTD3055L104G
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NTD3055L104G Datasheet PDF (8 Pages)
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NTD3055L104G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
25.0 A
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
104 mΩ
Polarity
N-Channel
Power Dissipation
48 W
Threshold Voltage
1.6 V
Input Capacitance
440 pF
Gate Charge
20.0 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
104 ns
Input Capacitance (Ciss)
440pF @25V(Vds)
Input Power (Max)
1.5 W
Fall Time
40.5 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1.5 W

NTD3055L104G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTD3055L104G Documents

ON Semiconductor
8 Pages / 0.11 MByte
ON Semiconductor
11 Pages / 0.27 MByte
ON Semiconductor
9 Pages / 0.11 MByte
ON Semiconductor
56 Pages / 0.1 MByte

NTD3055L104 Documents

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DPAK-3 IPAK-4 N-CH 60V 12A 104mΩ
ON Semiconductor
Power MOSFET 60V 12A 104mOhm Single N-Channel DPAK Logic Level, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
ON Semiconductor
IPAK N-CH 60V 12A
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Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK Rail
ON Semiconductor
IPAK N-CH 60V 12A
ON Semiconductor
IPAK N-CH 60V 12A
ON Semiconductor
DPAK N-CH 60V 12A
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