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Part Datasheet Search > MOSFETs > ON Semiconductor > NTD60N02R-1G Datasheet PDF
NTD60N02R-1G
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NTD60N02R-1G Datasheet PDF (8 Pages)
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NTD60N02R-1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
25.0 V
Current Rating
62.0 A
Case/Package
TO-251-3
Drain to Source Resistance (on) (Rds)
8.40 mΩ
Polarity
N-Channel
Power Dissipation
1.87 W
Input Capacitance
1.33 nF
Gate Charge
14.0 nC
Drain to Source Voltage (Vds)
25 V
Breakdown Voltage (Drain to Source)
25.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
62.0 A
Rise Time
33 ns
Input Capacitance (Ciss)
1330pF @20V(Vds)
Input Power (Max)
1.25 W
Fall Time
33 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.25W (Ta), 58W (Tc)

NTD60N02R-1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.38 mm
Size-Height
6.35 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTD60N02R-1G Documents

ON Semiconductor
8 Pages / 0.07 MByte
ON Semiconductor
17 Pages / 0.27 MByte
ON Semiconductor
9 Pages / 0.11 MByte
ON Semiconductor
8 Pages / 0.11 MByte

NTD60N02R1 Documents

ON Semiconductor
32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
ON Semiconductor
32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
ON Semiconductor
IPAK N-CH 25V 32A
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