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NTE4151PT1G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

SC-89-3

Description:

SC-89P-CH 20V 0.76A

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3D Model

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Documentation:

NTE4151PT1G Datasheet (6 Pages)

Pinout Diagram on1 PageHot

Package Outline Dimension on5 Page 6 Page

Package Footprint Pad Layout on5 Page 6 Page

Part Numbering System on1 Page 2 Page 6 Page

NTE4151PT1G Datasheet PDF (6 Pages)

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NTE4151PT1G Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

-20.0 V

Current Rating

-760 mA

Case/Package

SC-89-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.26 Ω

Polarity

N-Channel, P-Channel

Power Dissipation

313 mW

Input Capacitance

156 pF

Drain to Source Voltage (Vds)

20 V

Breakdown Voltage (Drain to Source)

20 V

Breakdown Voltage (Gate to Source)

±6.00 V

Continuous Drain Current (Ids)

760 mA

Rise Time

8.2 ns

Input Capacitance (Ciss)

156pF @5V(Vds)

Input Power (Max)

313 mW

Fall Time

20.4 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

313 mW

View Datasheet >

NTE4151PT1G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

1.7 mm

Size-Width

0.95 mm

Size-Height

0.8 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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NTE4151PT1G Environmental

NTE4151PT1G Export Classifications

NTE4151PT1G Function Overview

NTE4151PT1G Documents

NTE4151PT1G Datasheet

ON Semiconductor

6 Pages / 0.06 MByte

NTE4151PT1G Other Datasheet PDF

ON Semiconductor

7 Pages / 0.12 MByte

NTE4151PT1G Other References

ON Semiconductor

1 Pages / 0.15 MByte

NTE4151PT1 Documents

NTE4151PT1 Datasheet PDF

ON Semiconductor

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,350MA I(D),SC-89

NTE4151PT1G Datasheet PDF

ON Semiconductor

SC-89P-CH 20V 0.76A

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