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Part Datasheet Search > MOSFETs > ON Semiconductor > NTHC5513T1G Datasheet PDF
NTHC5513T1G
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NTHC5513T1G Datasheet PDF (10 Pages)
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NTHC5513T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
20.0 V
Current Rating
3.10 A
Case/Package (SI)
3216
Case/Package
1206
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.058 Ω
Polarity
N-Channel, P-Channel
Power Dissipation
1.1 W
Threshold Voltage
600 mV
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
3.90 A
Rise Time
13.0 ns
Input Capacitance (Ciss)
180pF @10V(Vds)
Input Power (Max)
1.1 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.1 W

NTHC5513T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.1 mm
Size-Width
1.7 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTHC5513T1G Documents

ON Semiconductor
10 Pages / 0.07 MByte
ON Semiconductor
11 Pages / 0.22 MByte
ON Semiconductor
9 Pages / 0.53 MByte
ON Semiconductor
10 Pages / 0.08 MByte

NTHC5513T1 Documents

ON Semiconductor
Chip N+P 20V 2.9A/2.2A
ON Semiconductor
Trans MOSFET N/P-CH 20V 2.9A/2.2A 8Pin Chip FET T/R
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