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Part Datasheet Search > MOSFETs > ON Semiconductor > NTHD4102PT1G Datasheet PDF
NTHD4102PT1G
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NTHD4102PT1G Datasheet PDF (5 Pages)
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NTHD4102PT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-20.0 V
Current Rating
-7.30 A
Case/Package
ChipFET-8
Number of Channels
2 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.064 Ω
Polarity
Dual P-Channel
Power Dissipation
1.1 W
Threshold Voltage
1.5 V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Breakdown Voltage (Gate to Source)
±8.00 V
Continuous Drain Current (Ids)
4.10 A
Rise Time
12 ns
Input Capacitance (Ciss)
750pF @16V(Vds)
Input Power (Max)
1.1 W
Fall Time
23 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.1 W

NTHD4102PT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.1 mm
Size-Width
1.65 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTHD4102PT1G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
204 Pages / 1.12 MByte
ON Semiconductor
9 Pages / 0.53 MByte

NTHD4102PT1 Documents

ON Semiconductor
Power MOSFET -20V -4.1A 80mOhm Dual P-Channel ChipFET
ON Semiconductor
Chip P-CH 20V 2.9A
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