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Part Datasheet Search > MOSFETs > ON Semiconductor > NTHD4P02FT1G Datasheet PDF
NTHD4P02FT1G
$ 0.046
NTHD4P02FT1G Datasheet PDF (7 Pages)
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NTHD4P02FT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-20.0 V
Current Rating
-3.00 A
Case/Package
SMD-8
Drain to Source Resistance (on) (Rds)
200 mΩ
Polarity
P-Channel
Power Dissipation
1.1 W
Input Capacitance
300 pF
Gate Charge
6.00 nC
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
3.00 A, -2.20 A
Rise Time
13 ns
Input Capacitance (Ciss)
300pF @10V(Vds)
Input Power (Max)
1.1 W
Fall Time
27 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.1 W

NTHD4P02FT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTHD4P02FT1G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.05 MByte

NTHD4P02FT1 Documents

ON Semiconductor
Power MOSFET and Schottky Diode 20V, 2.1A, Single P-Channel w/ 1A Schottky Barrier Diode, ChipFET
ON Semiconductor
Chip P-CH 20V 2.2A
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