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Part Datasheet Search > MOSFETs > ON Semiconductor > NTJD1155LT1 Datasheet PDF
NTJD1155LT1
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NTJD1155LT1 Datasheet PDF (5 Pages)
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NTJD1155LT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-8.00 V
Current Rating
-1.30 A
Case/Package
SC-88-6
Drain to Source Resistance (on) (Rds)
260 mΩ
Polarity
P-Channel
Power Dissipation
400 mW
Drain to Source Voltage (Vds)
8 V
Breakdown Voltage (Gate to Source)
1.00 V
Continuous Drain Current (Ids)
-1.30 A to 1.30 A
Input Power (Max)
400 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

NTJD1155LT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTJD1155LT1 Documents

ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
22 Pages / 0.07 MByte

NTJD1155 Documents

ON Semiconductor
Small Signal MOSFET -8V -1.3A 175mOhm Dual P-Channel SC−88 with Level-Shift, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
ON Semiconductor
SC-88 N+P 8V
ON Semiconductor
SC-88-6/SC-70-6/SOT-363-6 Dual P 8V 1.3A 175mΩ
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