NTJD4105CT1G Datasheet PDF - ON Semiconductor

●The NTJD4105CT1G is a -8/20V P and N-channel Small Signal MOSFET designed with low RDS(on) for minimum footprint and increased circuit efficiency. The low RDS (on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras and PDAs.

● Complementary N and P channel device

● Leading -8V trench for low RDS(on) performance

● ESD protected gate- Class 1 ESD rating

● 460°C/W Thermal resistance, junction to ambient