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Part Datasheet Search > MOSFETs > ON Semiconductor > NTJD4105CT2G Datasheet PDF
NTJD4105CT2G
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NTJD4105CT2G Datasheet PDF (8 Pages)
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NTJD4105CT2G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Current Rating
630 mA
Case/Package
SOT-363-6
Number of Channels
2 Channel
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.29 Ω
Polarity
N-Channel, P-Channel
Power Dissipation
270 mW
Threshold Voltage
1.5 V
Input Capacitance
46.0 pF
Gate Charge
3.00 nC
Drain to Source Voltage (Vds)
20V, 8V
Breakdown Voltage (Drain to Source)
±27 V
Continuous Drain Current (Ids)
775 mA, 910 mA
Input Capacitance (Ciss)
46pF @20V(Vds)
Input Power (Max)
270 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
550 mW

NTJD4105CT2G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTJD4105CT2G Documents

ON Semiconductor
8 Pages / 0.14 MByte
ON Semiconductor
8 Pages / 0.06 MByte

NTJD4105CT2 Documents

ON Semiconductor
Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88
ON Semiconductor
Trans MOSFET N/P-CH 20V/8V 0.63A/0.775A 6Pin SC-88 T/R
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