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Part Datasheet Search > MOSFETs > ON Semiconductor > NTMS10P02R2G Datasheet PDF
NTMS10P02R2G
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NTMS10P02R2G Datasheet PDF (6 Pages)
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NTMS10P02R2G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-20.0 V
Current Rating
-10.0 A
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.014 Ω
Polarity
P-Channel
Power Dissipation
2.5 W
Threshold Voltage
880 mV
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
10.0 A, 10.0 mA
Input Capacitance (Ciss)
3640pF @16V(Vds)
Input Power (Max)
1.6 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.6W (Ta)

NTMS10P02R2G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTMS10P02R2G Documents

ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
8 Pages / 0.84 MByte
ON Semiconductor
5 Pages / 0.58 MByte

NTMS10P02R2 Documents

ON Semiconductor
SOIC P-CH 20V 10A
ON Semiconductor
Power MOSFET -20V -10A 14mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
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