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NTZD5110NT1G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

SOT-563-6

Description:

SOT-563 N-CH 60V 0.294A

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Documentation:

NTZD5110NT1G Datasheet (5 Pages)

Package Outline Dimension on5 Page

Package Footprint Pad Layout on5 Page

Part Numbering System on1 Page 4 Page 5 Page

NTZD5110NT1G Application Note (12 Pages)

NTZD5110NT1G Datasheet PDF (5 Pages)

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NTZD5110NT1G Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

SOT-563-6

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

1.19 Ω

Polarity

Dual N-Channel

Power Dissipation

250 mW

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

310 mA, 294 mA

Rise Time

7.3 ns

Input Capacitance (Ciss)

24.5pF @20V(Vds)

Input Power (Max)

250 mW

Fall Time

7.3 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

280 mW

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NTZD5110NT1G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

1.7 mm

Size-Width

1.3 mm

Size-Height

0.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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NTZD5110NT1G Environmental

NTZD5110NT1G Export Classifications

NTZD5110NT1G Function Overview

NTZD5110NT1G Documents

NTZD5110NT1G Datasheet

ON Semiconductor

5 Pages / 0.06 MByte

NTZD5110NT1G Other Datasheet PDF

ON Semiconductor

42 Pages / 2.02 MByte

NTZD5110NT1G Application Note

ON Semiconductor

12 Pages / 0.16 MByte

NTZD5110NT1G Notice File

ON Semiconductor

2 Pages / 0.29 MByte

NTZD5110NT1 Documents

NTZD5110NT1 Datasheet PDF

ON Semiconductor

60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563

NTZD5110NT1G Datasheet PDF

ON Semiconductor

SOT-563 N-CH 60V 0.294A

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