OPA111BM Datasheet PDF - TI

●The OPA111BM is a low noise precision monolithic dielectrically isolated FET (Difet®) Operational Amplifier for use with optoelectronics. Outstanding performance characteristics allow its use in the most critical instrumentation applications. Noise, bias current, voltage offset, drift, open-loop gain, common-mode rejection and power supply rejection are superior to BIFET® amplifier. Very low bias current is obtained by dielectric isolation with on-chip guarding. Laser trimming of thin-film resistors gives very low offset and drift. Extremely low noise is achieved with patented circuit design techniques. A new cascade design allows high precision input specifications and reduced susceptibility to flicker noise. Standard 741 pin configuration allows upgrading of existing designs to higher performance levels.

● 8nV/√Hz at 10kHz Maximum 100% tested low noise

● 1pA Maximum low bias current

● 250µV Maximum low offset

● 1µV/°C Maximum low drift

● 120dB Minimum high open-loop gain

● 100dB Minimum high common-mode rejection

● Green product and no Sb/Br