PBSS5140T Datasheet PDF - NXP

●General description PNP low VCE(sat )Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Applications General-purpose switching and muting LCD backlighting Supply line switching circuits Battery-driven equipment (mobile phones, video cameras and handheld devices)