PC28F256P33TFE Datasheet PDF - Micron

●The PC28F256P33TFE is a 256MB parallel NOR Flash Embedded Memory features include high-performance synchronous-burst read mode, fast asynchronous access times, low power and flexible security options. The product family is manufactured using Micron 65nm process technology. The NOR flash device provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage. Configuring the read configuration register enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory PROGRAM and ERASE operations. Designed for low-voltage systems, the device supports READ operations with VCC at the low voltages and ERASE and PROGRAM operations with VPP at the low voltages or VPPH.

● High performance

● Asymmetrically blocked architecture

● Four 32kB parameter blocks - Top or bottom configuration

● Blank check to verify an erased block

● Power-transition erase/program lockout

● Individual zero-latency block locking

● Individual block lock-down

● Password access

● Flash data integrator optimized

● Basic command set and extended function Interface (EFI) command set compatible

● Common flash interface

● Quality and reliability - JESD47 compliant

● Minimum 100000 erase cycles per block