PC48F4400P0TB0EE Datasheet PDF - Micron

●The PC48F4400P0TB0EE is a 512MB high performance at low voltage Flash Memory with virtual chip enable I/O voltage CE# configuration. The Numonyx® Individually erasable memory blocks are sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous page-mode read. Configuring the RCR enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides an easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory program and erase operations. Designed for low voltage systems, the P33 family flash memory supports read operations with VCC at 3V and erase and program operations with VPP at 3/9V. Buffered enhanced factory programming provides the fastest flash array programming performance with VPP at 9V, which increases factory throughput.

● High performance

● Asymmetrically-blocked architecture

● Four 32kB parameter blocks - Top or bottom configuration

● Blank check to verify an erase block

● Absolute write protection - VPP = VSS

● Power-transition erase/program lockout

● Individual zero-latency block locking

● Individual block lock-down capability

● Password access

● Basic command set and extended function interface command set compatible

● Common flash interface capable

● Quality and reliability - JESD47E compliant

● Minimum 100000 erase cycles per block