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PD57006 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

PowerSO-10RF

Description:

STMICROELECTRONICS PD57006 RF FET Transistor, 65V, 1A, 20W, 925MHz, 960MHz, PowerSO-10RF

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Documentation:

PD57006 Datasheet (22 Pages)

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PD57006 Datasheet PDF (22 Pages)

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PD57006 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

10 Pin

Supply Voltage (DC)

28.0 V

Case/Package

PowerSO-10RF

Polarity

N-Channel

Power Dissipation

20 W

Drain to Source Voltage (Vds)

65 V

Breakdown Voltage (Drain to Source)

65.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

1.00 A

Output Power

6.00 W

Input Capacitance (Ciss)

27pF @28V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

20000 mW

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PD57006 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tube

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PD57006 Environmental

PD57006 Export Classifications

PD57006 Function Overview

PD57006 Documents

PD57006 Datasheet

ST Microelectronics

22 Pages / 0.53 MByte

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