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Part Datasheet Search > Transistors > ST Microelectronics > PD57006S Datasheet PDF
PD57006S
$ 19.62
PD57006S Datasheet PDF (14 Pages)
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PD57006S Specifications

TYPE
DESCRIPTION
Frequency
945 MHz
Number of Pins
3 Pin
Case/Package
PowerSO-10
Polarity
N-Channel
Power Dissipation
20.0 W
Breakdown Voltage (Drain to Source)
65.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
1.00 A
Output Power
6 W
Gain
15 dB
Test Current
70 mA
Voltage Rating
65 V

PD57006S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube

PD57006S Documents

ST Microelectronics
14 Pages / 0.27 MByte

PD57006 Documents

ST Microelectronics
STMICROELECTRONICS PD57006 RF FET Transistor, 65V, 1A, 20W, 925MHz, 960MHz, PowerSO-10RF
ETC1
HF to 2000MHz Class AB Common Source - PowerSO-10RF
ST Microelectronics
STMICROELECTRONICS PD57006-E RF FET Transistor, 65V, 1A, 20W, 925MHz, 960MHz, SOIC
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Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Straight lead) T/R
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Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Straight lead) Tube
ST Microelectronics
Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Formed lead) T/R
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Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Straight lead)
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