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Part Datasheet Search > MOSFETs > ST Microelectronics > PD57006STR-E Datasheet PDF
PD57006STR-E
$ 11.74
PD57006STR-E Datasheet PDF (22 Pages)
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PD57006STR-E Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
945 MHz
Number of Pins
3 Pin
Case/Package
PowerSO-10RF
Power Dissipation
20000 mW
Drain to Source Voltage (Vds)
65 V
Output Power
6 W
Gain
15 dB
Test Current
70 mA
Input Capacitance (Ciss)
27pF @28V(Vds)
Operating Temperature (Max)
165 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
20000 mW
Voltage Rating
65 V

PD57006STR-E Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-65℃ ~ 165℃

PD57006STR-E Documents

ST Microelectronics
22 Pages / 0.53 MByte
ST Microelectronics
1 Pages / 0.14 MByte

PD57006 Documents

ST Microelectronics
STMICROELECTRONICS PD57006 RF FET Transistor, 65V, 1A, 20W, 925MHz, 960MHz, PowerSO-10RF
ETC1
HF to 2000MHz Class AB Common Source - PowerSO-10RF
ST Microelectronics
STMICROELECTRONICS PD57006-E RF FET Transistor, 65V, 1A, 20W, 925MHz, 960MHz, SOIC
ST Microelectronics
Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Straight lead) T/R
ST Microelectronics
Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Straight lead) Tube
ST Microelectronics
Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Formed lead) T/R
ST Microelectronics
Trans RF MOSFET N-CH 65V 1A 3Pin PowerSO-10RF (Straight lead)
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