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PESD5V0S1BB,115 Datasheet PDF - NXP

Manufacturer:

NXP

Category:

TVS Diodes

Case Package:

SOD-523

Description:

NXP PESD5V0S1BB,115 ESD Protection Device, TVS, 14V, SOD-523, 2Pins, 130W

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

PESD5V0S1BB,115 Datasheet (15 Pages)

Pinout Diagram on2 PageHot

Package Outline Dimension on9 Page 10 Page 11 Page

Part Numbering System on2 Page

PESD5V0S1BB,115 Datasheet PDF (15 Pages)

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PESD5V0S1BB,115 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

2 Pin

Capacitance

45 pF

Case/Package

SOD-523

Breakdown Voltage

9.5 V

Number of Circuits

1 Circuit

Number of Positions

2 Position

Power Dissipation

130 W

Clamping Voltage

14 V

Test Current

1 mA

Max Breakdown Voltage

9.5 V

Peak Pulse Power

130 W

Min Breakdown Voltage

5.5 V

Reverse Breakdown Voltage

5.5 V

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Junction Temperature

150 ℃

View Datasheet >

PESD5V0S1BB,115 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

1.25 mm

Size-Width

0.85 mm

Size-Height

0.65 mm

Operating Temperature

-65℃ ~ 150℃ (TA)

View Datasheet >

PESD5V0S1BB,115 Environmental

PESD5V0S1BB,115 Documents

PESD5V0S1BB,115 Datasheet

NXP

15 Pages / 0.08 MByte

PESD5V0S1BB,115 Other Datasheet PDF

NXP

206 Pages / 0.21 MByte

PESD5V0S1BB,115 Notice File

NXP

72 Pages / 3.63 MByte

PESD5V0S1BB,115 Other References

NXP

1 Pages / 0.12 MByte

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* Unidirectional ESD protection of one line * Max. peak pulse power: PPP = 330W at tp = 8/20us * Low clamping voltage: VCL = 20V at IPP = 18A * Ultra low leakage current: IRM * ESD protection > 23kV * IEC 61000-4-2, level 4 (ESD) * IEC 61000-4-5 (surge); IPP = 18A at tp = 8/20us * AEC-Q101 qualified