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Part Datasheet Search > BJTs > NXP > PMBTA42DS,125 Datasheet PDF
PMBTA42DS,125
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PMBTA42DS,125 Datasheet PDF (10 Pages)
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PMBTA42DS,125 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-457
Polarity
NPN
Breakdown Voltage (Collector to Emitter)
300 V
Continuous Collector Current
0.1A
hFE Min
40 @30mA, 10V
hFE Max
40
Input Power (Max)
420 mW

PMBTA42DS,125 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

PMBTA42DS,125 Documents

NXP
10 Pages / 0.07 MByte
NXP
206 Pages / 0.21 MByte

PMBTA42 Documents

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TO-236AB NPN 300V 0.1A
Nexperia
Trans GP BJT NPN 300V 0.1A 0.25W(1/4W) 3Pin TO-236AB
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NPN high-voltage transistor
Yageo
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon,
Nexperia
TRANS NPN 300V 0.1A SOT23
NXP
TO-236AB NPN 300V 0.1A
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TRANS NPN 300V 0.1A SOT23
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TRANS NPN 300V 0.1A SOT23
Nexperia
TRANS 2NPN 300V 0.1A 6TSOP
Nexperia
Transistor: NPN; bipolar; 300V; 100mA; 0.25W(1/4W); SOT23, TO236AB
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