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Part Datasheet Search > NXP > PSMN057-200B Datasheet PDF
PSMN057-200B
$ 0.776
PSMN057-200B Datasheet PDF (12 Pages)
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PSMN057-200B Specifications

TYPE
DESCRIPTION
Case/Package
TO-263-3
Power Dissipation
250 W
Rise Time
58 ns
Fall Time
78 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

PSMN057-200B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Size-Length
10.3 mm
Size-Width
9.4 mm
Size-Height
4.5 mm

PSMN057-200B Documents

NXP
12 Pages / 0.15 MByte
NXP
12 Pages / 0.34 MByte

PSMN057200 Documents

NXP
D2PAK N-CH 200V 39A
Nexperia
MOSFET N-CH 200V 39A D2PAK
Nexperia
MOSFET N-CH 200V 39A TO220AB
NXP
TO-220AB N-CH 200V 39A
NXP
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
NXP
TO-220AB N-CH 200V 39A
Nexperia
Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NXP
N-channel TrenchMOS SiliconMAX standard level FET
Philips
N-channel TrenchMOS transistor
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