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PZT2222AT1G
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PZT2222AT1G Datasheet PDF (5 Pages)
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PZT2222AT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
300 MHz
Number of Pins
4 Pin
Voltage Rating (DC)
40.0 V
Current Rating
600 mA
Case/Package
TO-261-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
1.5 W
Breakdown Voltage (Collector to Emitter)
40 V
Thermal Resistance
83.3℃/W (RθJC)
Continuous Collector Current
0.6A
hFE Min
100 @150mA, 10V
Input Power (Max)
1.5 W
DC Current Gain (hFE)
300
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1500 mW

PZT2222AT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.57 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

PZT2222AT1G Documents

ON Semiconductor
5 Pages / 0.05 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
9 Pages / 0.53 MByte
ON Semiconductor
1 Pages / 0.13 MByte

PZT2222AT1 Documents

ON Semiconductor
Trans GP BJT NPN 40V 0.6A 1500mW 4Pin(3+Tab) SOT-223 T/R
Motorola
Trans GP BJT NPN 40V 0.6A 4Pin(3+Tab) SOT-223 T/R
Nexperia
Trans GP BJT NPN 40V 0.6A 1150mW 4Pin(3+Tab) SC-73 T/R
ON Semiconductor
SOT-223 NPN 40V 0.6A
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