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Part Datasheet Search > BJTs > Infineon > PZTA42E6327HTSA1 Datasheet PDF
PZTA42E6327HTSA1
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PZTA42E6327HTSA1 Datasheet PDF (6 Pages)
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PZTA42E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-261-4
Polarity
NPN
Breakdown Voltage (Collector to Emitter)
300 V
Continuous Collector Current
0.5A
hFE Min
40 @30mA, 10V
Input Power (Max)
1.5 W

PZTA42E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

PZTA42E6327HTSA1 Documents

Infineon
6 Pages / 0.5 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
7 Pages / 0.05 MByte

PZTA42E6327 Documents

Infineon
Trans GP BJT NPN 300V 0.5A 4Pin(3+Tab) SOT-223 T/R
Infineon
TRANS NPN 300V 0.5A SOT-223
Infineon
Trans GP BJT NPN 300V 0.5A 4Pin(3+Tab) SOT-223 T/R
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Infineon
SOT-223 NPN 300V 0.5A
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