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Part Datasheet Search > MOSFETs > ROHM Semiconductor > QS8J4TR Datasheet PDF
QS8J4TR
$ 0.669
QS8J4TR Datasheet PDF (12 Pages)
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QS8J4TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SMD-8
Number of Channels
2 Channel
Polarity
P-CH
Power Dissipation
1.5 W
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
±30 V
Continuous Drain Current (Ids)
4A
Rise Time
20 ns
Input Capacitance (Ciss)
800pF @10V(Vds)
Input Power (Max)
550 mW
Fall Time
50 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1500 mW

QS8J4TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

QS8J4TR Documents

ROHM Semiconductor
12 Pages / 2.36 MByte
ROHM Semiconductor
13 Pages / 0.47 MByte
ROHM Semiconductor
3 Pages / 0.07 MByte
ROHM Semiconductor
38 Pages / 10.45 MByte

QS8J4 Documents

ROHM Semiconductor
TSMT P-CH 30V 4A
ROHM Semiconductor
Mosfet, Auto, Dual p-Ch, -30V, Tsmt
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