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Part Datasheet Search > High Voltage MOS > ROHM Semiconductor > R6004ENX Datasheet PDF
R6004ENX
$ 0.661

R6004ENX Datasheet PDF - ROHM Semiconductor

Manufacturer:
ROHM Semiconductor
Category:
High Voltage MOS
Case Package:
TO-220-3
Description:
TO-220FM N 600V 4A 0.9Ω
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Documentation:
R6004ENX Datasheet (13 Pages)
R6004ENX Datasheet PDF (13 Pages)
View Datasheet
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R6004ENX Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.9 Ω
Polarity
N-Channel
Power Dissipation
40 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
4A
Rise Time
22 ns
Input Capacitance (Ciss)
250pF @25V(Vds)
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
40W (Tc)
View Datasheet >

R6004ENX Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
150℃ (TJ)
Minimum Packing Quantity
1000
View Datasheet >

R6004ENX Documents

R6004ENX Datasheet
ROHM Semiconductor
13 Pages / 0.78 MByte
R6004ENX Other Datasheet PDF
ROHM Semiconductor
29 Pages / 0.11 MByte

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