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R6006ANX Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET N-CH 600V 6A 3Pin(3+Tab) TO-220FM Bulk

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

R6006ANX Datasheet (15 Pages)

R6006ANX Datasheet PDF (15 Pages)

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R6006ANX Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

1.2 Ω

Power Dissipation

40 W

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Rise Time

18 ns

Input Capacitance (Ciss)

520pF @25V(Vds)

Input Power (Max)

40 W

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Power Dissipation (Max)

40W (Tc)

View Datasheet >

R6006ANX Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Bulk

Size-Length

10.3 mm

Size-Width

4.8 mm

Size-Height

15.4 mm

Operating Temperature

150℃ (TJ)

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R6006ANX Environmental

R6006ANX Function Overview

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