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R6011ENX Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220FM N 600V 11A 0.34Ω

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

R6011ENX Datasheet (15 Pages)

R6011ENX Datasheet PDF (15 Pages)

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R6011ENX Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.34 Ω

Polarity

N-Channel

Power Dissipation

53 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Continuous Drain Current (Ids)

11A

Rise Time

40 ns

Input Capacitance (Ciss)

670pF @25V(Vds)

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

40W (Tc)

View Datasheet >

R6011ENX Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Operating Temperature

150℃ (TJ)

Minimum Packing Quantity

1000

View Datasheet >

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