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Part Datasheet Search > High Voltage MOS > ROHM Semiconductor > R6011KNX Datasheet PDF
R6011KNX
$ 0.981

R6011KNX Datasheet PDF - ROHM Semiconductor

Manufacturer:
ROHM Semiconductor
Category:
High Voltage MOS
Case Package:
TO-220-3
Description:
TO-220FM N 600V 11A 0.34Ω
Pictures:
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Documentation:
R6011KNX Datasheet (13 Pages)
R6011KNX Datasheet PDF (13 Pages)
View Datasheet
Click page to view the detail

R6011KNX Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.34 Ω
Polarity
N-Channel
Power Dissipation
53 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
11A
Rise Time
25 ns
Input Capacitance (Ciss)
740pF @25V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
53W (Tc)
View Datasheet >

R6011KNX Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
1000
View Datasheet >

R6011KNX Documents

R6011KNX Datasheet
ROHM Semiconductor
13 Pages / 2.38 MByte
R6011KNX Other Datasheet PDF
ROHM Semiconductor
14 Pages / 2.39 MByte

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