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Part Datasheet Search > High Voltage MOS > ROHM Semiconductor > R6020ENZ1C9 Datasheet PDF
R6020ENZ1C9
$ 2.506
R6020ENZ1C9 Datasheet PDF (13 Pages)
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R6020ENZ1C9 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.17 Ω
Polarity
N-Channel
Power Dissipation
120 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
20A
Rise Time
53 ns
Input Capacitance (Ciss)
1400pF @25V(Vds)
Fall Time
67 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
120W (Tc)

R6020ENZ1C9 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Bulk
Operating Temperature
150℃ (TJ)

R6020ENZ1C9 Documents

ROHM Semiconductor
13 Pages / 0.88 MByte
ROHM Semiconductor
3 Pages / 0.12 MByte

R6020ENZ1 Documents

ROHM Semiconductor
TO-247 N-CH 600V 20A
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