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R6024KNZ1C9 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

High Voltage MOS

Case Package:

TO-247-3

Description:

TO-247 N-CH 600V 24A

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Documentation:

R6024KNZ1C9 Datasheet (13 Pages)

R6024KNZ1C9 Datasheet PDF (13 Pages)

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R6024KNZ1C9 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.15 Ω

Polarity

N-Channel

Power Dissipation

245 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

24A

Rise Time

50 ns

Input Capacitance (Ciss)

2000pF @25V(Vds)

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

245W (Tc)

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R6024KNZ1C9 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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R6024KNZ1C9 Environmental

R6024KNZ1C9 Function Overview

R6024KNZ1C9 Documents

R6024KNZ1C9 Datasheet

ROHM Semiconductor

13 Pages / 2.03 MByte

R6024KNZ1C9 Other Datasheet PDF

ROHM Semiconductor

14 Pages / 2.03 MByte

R6024KNZ1 Documents

R6024KNZ1C9 Datasheet PDF

ROHM Semiconductor

TO-247 N-CH 600V 24A

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