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R8008ANX Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220FM N 800V 8A 0.79Ω

Pictures:

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Product Pictures

Documentation:

R8008ANX Datasheet (6 Pages)

R8008ANX Datasheet PDF (6 Pages)

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R8008ANX Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.79 Ω

Polarity

N-Channel

Power Dissipation

66 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

800 V

Continuous Drain Current (Ids)

Rise Time

50 ns

Input Capacitance (Ciss)

1080pF @25V(Vds)

Input Power (Max)

50 W

Fall Time

30 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

50W (Tc)

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R8008ANX Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Operating Temperature

150℃ (TJ)

Minimum Packing Quantity

1000

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R8008ANX Environmental

R8008ANX Function Overview

R8008ANX Documents

R8008ANX Datasheet

ROHM Semiconductor

6 Pages / 0.5 MByte

R8008ANX Other Datasheet PDF

ROHM Semiconductor

15 Pages / 3.43 MByte

R8008 Documents

R8008ANX Datasheet PDF

ROHM Semiconductor

TO-220FM N 800V 8A 0.79Ω

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