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RD3P050SNTL1 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Case Package:

TO-252

Description:

Power Field-Effect Transistor,

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Documentation:

RD3P050SNTL1 Datasheet (16 Pages)

RD3P050SNTL1 Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

TO-252

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.135 Ω

Power Dissipation

15 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

100 V

Rise Time

15 ns

Input Capacitance (Ciss)

530pF @25V(Vds)

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

15000 mW

View Datasheet >

RD3P050SNTL1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

RD3P050SNTL1 Environmental

RD3P050SNTL1 Documents

RD3P050SNTL1 Datasheet

ROHM Semiconductor

16 Pages / 2.81 MByte

RD3P050 Documents

RD3P050SNTL1 Datasheet PDF

ROHM Semiconductor

Power Field-Effect Transistor,

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